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The GS61008T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology ® cell layout for high-current die performance & yield. GaN PX ®packaging enables low inductance & low thermal resistance in a small package. The GS61008T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications.